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Carrier confinement at MgZnO/CdZnO heterojunction thin-film transistors
Author(s): Shubham Mondal; Sritoma Paul; Md Jawaid Alam; Subhananda Chakrabarti
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Paper Abstract

In this paper, the authors have propounded a pragmatic solution to circumvent the problem of inherent n-type conductivity of Zinc Oxide (ZnO), which remains the major obstacle to superior device performance. The proposed method employs the concept of carrier confinement in heterojunction thin film transistors that offers a prospective alternative to intruding into lesser known materials and their associated complexities. Carrier confinement is achieved in the low band-gap Cadmium Zinc Oxide (CdZnO) channel shielded by high band-gap Magnesium Zinc Oxide (MgZnO) on one side and gate dielectric SiO2 on the other, which has been further corroborated by Energy Band diagram of the confined region that manifests the formation of two dimensional electron gas (2-DEG) at the CdZnO-SiO2 interface. The device exhibits almost ideal transfer characteristics with a very narrow transition region between the ON and OFF states. The sub-threshold region is characterized by a high ION/IOFF ratio (1011) and near ideal sub-threshold swing (74mV/decade). Although a slight compromise in field effect mobility is incurred owing to the carrier transport mechanisms in confined regions, the benefits of carrier confinement in the low potential well far outweigh its detriments to emerge as a promising method for improving device performance.

Paper Details

Date Published: 3 September 2019
PDF: 7 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 110891L (3 September 2019); doi: 10.1117/12.2527648
Show Author Affiliations
Shubham Mondal, Kalyani Government Engineering College (India)
Sritoma Paul, Kalyani Government Engineering College (India)
Md Jawaid Alam, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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