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Gate-tunable spin Hall conductivity in ultra-thin platinum (Conference Presentation)
Author(s): Masashi Shiraishi; Sergey Dushenko

Paper Abstract

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of super- conductivity in insulator [1], the paramagnet–ferromagnet transition in (In,Mn)As [2], and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such a degree of control even in metallic materials [3]. In this presentation, reversible modulation of up to two orders of magnitude of the inverse spin Hall effect in ultrathin platinum by ionic gating is discussed [4]. References: [1] K. Ueno et al., Nature Mater. 7, 855 (2008). [2] H. Ohno et al., Nature 408, 944 (2000). [3] D. Chiba et al., Nature Mater. 10, 853. (2011). [4] S. Dushenko, M. Shiraishi et al., Nature Commun. 9, 3118 (2018).

Paper Details

Date Published: 10 September 2019
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Proc. SPIE 11090, Spintronics XII, 110902J (10 September 2019); doi: 10.1117/12.2527646
Show Author Affiliations
Masashi Shiraishi, Kyoto Univ. (Japan)
Sergey Dushenko, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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