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Controlling and modifying sensing properties of tunneling magnetoresistance sensors by voltage controlled magnetic anisotropy (Conference Presentation)
Author(s): Piotr Wisniowski; Michal Dabek; Witold Skowronski; Jerzy Wrona; Susana Cardoso; Paulo P. Freitas

Paper Abstract

Conventional design of tunneling magnetoresistance (TMR) sensors offers high sensitivity, tunable sensing range and resistance that make the sensors attractive for wide range of magnetic field sensing applications. However, for a given sensor design and bias conditions the sensitivity, sensing range and noise level are fixed and the field detection limited by magnetic noise that increases with the sensitivity. We design TMR sensors based on state-of-the-art CoFeB/MgO/CoFeB structure with perpendicular anisotropy and proposed to use voltage controlled magnetic anisotropy (VCMA) [1] to control and modify the sensing properties. We showed that modification of sensing layer magnetic anisotropy by bias voltage polarity and strength enables effective modification of the sensing range and sensitivity [2]; reduction and control of magnetic noise [3] and tuning dynamic responses [4]. Our sensors design enable circuit level control and modification of the critical sensing properties and parameter by simple reversing the bias polarity and varying its strength. This creates new possibilities in development and applications of the TMR sensors with bias voltage controlled sensing properties. [1] W.G. Wang, M. Li, S. Hageman, C. L. Chien, Nat. Mater. 11, 64(2012); P. Khalili, K. L. Wang, SPIN Vol.02, No. 03, 1240002 (2012) [2] W. Skowronski, P. Wisniowski et al Appl. Phys. Lett. 101 , 192401 (2012) [3] P. Wisniowski, M. Dabek, et al Appl. Phys. Lett. 105, 082404, (2014) [4] M. Dabek, P. Wisniowski, Sensors and Actuators A 232 (2015)

Paper Details

Date Published: 10 September 2019
Proc. SPIE 11090, Spintronics XII, 110903O (10 September 2019); doi: 10.1117/12.2527538
Show Author Affiliations
Piotr Wisniowski, AGH Univ. of Science and Technology (Poland)
Michal Dabek, AGH Univ. of Science and Technology (Poland)
Witold Skowronski, AGH Univ. of Science and Technology (Poland)
Susana Cardoso, INESC MN (Portugal)
Paulo P. Freitas, INESC MN (Portugal)

Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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