Share Email Print
cover

Proceedings Paper • new

Achievement of highly uniform Si crystallization using a spot beam laser steering method
Author(s): Min Jin Kang; Tae Sang Park; Byoung-Ho Cheong
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A 355-nm solid state laser was irradiated onto 55-nm thick amorphous Si on a glass substrate using a spot beam steering method. After irradiation with a single pulse of Gaussian beam of varying laser energies, the Si surfaces were examined using Nomarski optical images. The images were composed of several color regions including pink, orange, dark red, and yellow. The energy fluences were 30-40 mJ/cm2 (pink), 40-70 mJ/cm2 (orange), 70-110 mJ/cm2 (dark red), and over 110 mJ/cm2 (yellow). Within the pink to dark-red area, as the fluence increases, the surface roughness and Si crystallinity also increase. However, in the yellow region, the Si surface is partially ablated due to the excess laser intensity. The laser beam, not exceeding the peak fluence of 110 mJ/cm2 , was scanned in the horizontal direction with beam overlap number of 20-100. The result revealed that high stain was observed in 20 pulses (scan pitch of 8.0 μm) caused by the difference in energy density from pulse to pulse. However, in 100 pulses (scan pitch of 1.6 μm), the Si surface was smooth and uniform with a roughness of 22 nm.

Paper Details

Date Published: 3 September 2019
PDF: 6 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 110891K (3 September 2019); doi: 10.1117/12.2527361
Show Author Affiliations
Min Jin Kang, Korea Univ. (Korea, Republic of)
Tae Sang Park, Korea Univ. (Korea, Republic of)
Byoung-Ho Cheong, Korea Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

© SPIE. Terms of Use
Back to Top