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Proceedings Paper

Ion-sensitive field-effect transistors with Si3N4 and TaO2 gate insulator for studying self-assembly of photosynthetic proteins
Author(s): Arash Takshi; Fatemeh Khorramshahi; Houman Yaghoubi; Daniel Jun; J. Thomas Beatty
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Paper Abstract

The reaction center (RC) protein from photosynthetic purple bacteria is an organic structure with the capability of absorbing photons at low light intensities and generating electron-hole pairs with a high efficiency. Application of this biomaterial for energy harvesting and sensor devices has been studied before. A key in employing RCs in an electrochemical device is to immobilize the proteins on an electrode. In this work, ion-sensitive field-effect transistors with Si3N4 and TaO2 gate insulator were tested to measure the success rate in immobilizing the proteins. The results show that by far Si3N4 is a better choice than TaO2, due to the effective self-assembly of the linker molecules. The density of the attached proteins to the Si3N4 transistor was estimated to be 5×109 proteins/cm2 by analyzing the drift in the threshold voltage of the transistor. The fabricated device also presented the feasibility of using the RCs in an integrated photo-transistor.

Paper Details

Date Published: 30 August 2019
PDF: 6 pages
Proc. SPIE 11096, Organic and Hybrid Sensors and Bioelectronics XII, 1109607 (30 August 2019);
Show Author Affiliations
Arash Takshi, Univ. of South Florida (United States)
Fatemeh Khorramshahi, Univ. of South Florida (United States)
Houman Yaghoubi, Genalyte, Inc. (United States)
Daniel Jun, The Univ. of British Columbia (Canada)
J. Thomas Beatty, The Univ. of British Columbia (Canada)


Published in SPIE Proceedings Vol. 11096:
Organic and Hybrid Sensors and Bioelectronics XII
Ioannis Kymissis; Emil J. W. List-Kratochvil; Ruth Shinar, Editor(s)

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