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Proceedings Paper

Silicon carbide detectors for diagnostics of laser-produced plasmas
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Paper Abstract

Recently developed silicon carbide (SiC) detectors have been employed to study pulsed laser plasmas produced by irradiation of a double-stream gas puff target with nanosecond laser pulses. The plasma emitted by a gas-puff target source in the soft X-ray (SXR, λ = 0.1 - 10 nm) and extreme ultraviolet (EUV, λ = 10 - 120 nm) ranges was monitored with silicon carbide (SiC) detectors and compared with a commercial, calibrated silicon (Si) photodiode (AXUV-HS1). Different filters have been used to select the emission in different wavelength ranges from the broad-band emission of the plasma. This work shows the applicability of SiC detectors to measure the SXR and EUV ns pulses from the plasma, useful for monitoring and optimizing the gas-puff laser-plasma sources developed at IOE-MUT, in Warsaw (Poland). Some aspects relative to the plasma stability as well as characterization of the plasma source (i.e. the overall evaluation of the signal and the time trace profile) will be presented and discussed.

Paper Details

Date Published: 26 April 2019
PDF: 7 pages
Proc. SPIE 11032, EUV and X-ray Optics: Synergy between Laboratory and Space VI, 110320W (26 April 2019);
Show Author Affiliations
A. Torrisi, Nuclear Physics Institute of the CAS, v.v.i. (Czech Republic)
P. W. Wachulak, Military Univ. of Technology (Poland)
H. Fiedorowicz, Military Univ. of Technology (Poland)
L. Torrisi, Univ. di Messina (Italy)


Published in SPIE Proceedings Vol. 11032:
EUV and X-ray Optics: Synergy between Laboratory and Space VI
René Hudec; Ladislav Pina, Editor(s)

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