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Proceedings Paper

An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures
Author(s): Majed Khodr; Manisha Chakraburtty; Patrick J. McCann
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Paper Abstract

A thermophotovoltaic (TPV) device design based on multiple quantum well (MQW) materials composed of Pb0.81Sn0.19Se wells and Pb0.80Sr0.20Se barriers, which are nanostructured materials that can be gown on low-cost silicon, was modeled to predict electrical power generation densities. MQW materials with intersubband energy gaps of 343 meV and 450 meV in a dual junction configuration were studied. For a thermal radiator at a temperature of 1364ºC the short circuit current density was estimated to be 12.1 A/cm2 for each junction. Open circuit voltages for each junction ranged from 130 mV to 262 mV depending on bandgap and temperature. Power generation densities for this dual junction device increased from 2.7 W/cm2 to 3.4 W/cm2 as temperature decreased from 50ºC to 7ºC. Using a conservative value of $1/cm2 for the manufacturing of this silicon-based TPV device technology, the costs for this novel electrical power generation technology are projected to be less than $0.30/W.

Paper Details

Date Published: 9 September 2019
PDF: 6 pages
Proc. SPIE 11121, New Concepts in Solar and Thermal Radiation Conversion II, 1112104 (9 September 2019);
Show Author Affiliations
Majed Khodr, American Univ. of Ras Al Khaimah (United Arab Emirates)
Manisha Chakraburtty, The Univ. of Oklahoma (United States)
Patrick J. McCann, The Univ. of Oklahoma (United States)


Published in SPIE Proceedings Vol. 11121:
New Concepts in Solar and Thermal Radiation Conversion II
Jeremy N. Munday; Peter Bermel, Editor(s)

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