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Drift spin dynamics in two-dimensional electron gas (Conference Presentation)
Author(s): Yoji Kunihashi; Yusuke Tanaka; Haruki Sanada; Koji Onomitsu; Hideki Gotoh; Makoto Kohda; Junsaku Nitta; Tetsuomi Sogawa

Paper Abstract

Several types of spin-based logic devices have been proposed in recent years. Almost all of them are operated by employing the drift transport of electron spins under in-plane electric fields. However, it is still unclear how an in-plane electric field influences the spin dynamics of drifting electrons. Here, we demonstrated long-distance spin transport in a GaAs quantum well, where the spin-orbit interactions (SOI) were set at exactly the SU(2) symmetry generating a persistent spin helix (PSH) state. The spatial distribution and temporal development of optically-injected electron spins in a modulation-doped GaAs single quantum well were detected with Kerr rotation microscopy based on the pump-probe technique at T = 8 K. We found that the transport length of drifting spins in a PSH condition exceeds 100 micrometers due to the suppression of D’yakonov-Perel spin relaxations [1]. The spin precession period, spin decay length and transport path of drifting spins can be controlled by electrical means in a single device. We also observed a drift-induced change in the spin precession period for drifting electron spins by visualizing the spatial distribution of electron spins. This phenomenon results from the cubic term of the Dresselhaus SOI enhanced by the application of in-plane electric fields [2]. Our finding will be of great importance for a deeper understanding of spin transport dynamics as well as for relevant spintronics applications using an in-plane electric field. [1] Y. Kunihashi et al., Nat. Commun. 7, 10722 (2016). [2] Y. Kunihashi et al., Phys. Rev. Lett. 119, 187703 (2017).

Paper Details

Date Published: 10 September 2019
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Proc. SPIE 11090, Spintronics XII, 110900H (10 September 2019); doi: 10.1117/12.2526911
Show Author Affiliations
Yoji Kunihashi, NTT Basic Research Labs. (Japan)
Yusuke Tanaka, NTT Basic Research Labs. (Japan)
Haruki Sanada, NTT Basic Research Labs. (Japan)
Koji Onomitsu, NTT Basic Research Labs. (Japan)
Hideki Gotoh, NTT Basic Research Labs. (Japan)
Makoto Kohda, Tohoku Univ. (Japan)
Junsaku Nitta, Tohoku Univ. (Japan)
Tetsuomi Sogawa, NTT Basic Research Labs. (Japan)


Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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