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Nonlinear optical properties and ultrafast carrier dynamics in two-dimensional PtSe2 materials
Author(s): Lei Wang; Saifeng Zhang; Niall McEvoy; Ningning Dong; Jun Wang
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Paper Abstract

The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1–2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra-broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, layered PtSe2 shows much better air stability than its analogue, black phosphorous. In this work, high quality of centimeter scale PtSe2 films with controllable thicknesses were prepared through thermally assisted conversion method. The linear and nonlinear optical performance and ultrafast dynamics of layered PtSe2, and signatures of the transition from semiconductor to semimetal have been systematically studied experimentally and theoretically. Combining with rate equations, first-principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.

Paper Details

Date Published: 3 September 2019
PDF: 10 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108918 (3 September 2019); doi: 10.1117/12.2526520
Show Author Affiliations
Lei Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Saifeng Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Niall McEvoy, Trinity College Dublin (Ireland)
Ningning Dong, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Jun Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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