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Proceedings Paper

Robust manipulation of magnetic properites in dilute magnetic semiconductor (Ga,Mn)As via organic molecules (Conference Presentation)
Author(s): Xiaolei Wang; Hailong Wang; Peng Xiong; Jianhua Zhao

Paper Abstract

Low power control of magnetic properties in nanoscale is of great significance and has attracted lots of interests in magnetic data processing and novel spintronic applications. So far, there have been strenuous efforts on controlling the Curie temperature (Tc) and magnetization (M) by a variety of means. A representative example which has generated much excitement is using electrostatic field-effect gating, which has been shown to alter the magnetic properties of (III, Mn)V films in a certain extent. In this work, we utilize the surface molecular decoration as a new route to achieve large manipulation of Tc, M magnitude and direction in the (Ga,Mn)As films. Carrier densities of the films are vastly changed by two kinds of molecules acting as the electron donors and acceptors, resulting in a prominent variation of Tc up to 36 K and M direction up to 27˚. Charge transfer mechanism through the interface is established, indicating much larger extent of the molecular modulation than electrical gating. Moreover, arbitrary self-assembled monolayer (SAM) nanopatterns on the (Ga,Mn)As film surface could be created via dip-pen nanolithography (DPN), which offers a convenient method for generating magnetic nanostructures. This work opens a more efficient and functional pathway of manipulating magnetic properties in a greater range, and realizes nano-patterns of molecule/semiconductor hybrid structure with marked prospects in disparate areas of spintronic research and nanotechnology in future application.

Paper Details

Date Published: 10 September 2019
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Proc. SPIE 11090, Spintronics XII, 1109008 (10 September 2019);
Show Author Affiliations
Xiaolei Wang, Institute of Semiconductors (China)
Hailong Wang, Institute of Semiconductors, (China)
Peng Xiong, Florida State Univ. (United States)
Jianhua Zhao, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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