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Proceedings Paper

Research on responsivity of Si-based p-i-n quadrant photodiode detector interact with millisecond pulsed laser
Author(s): Hongxu Liu; Guangyong Jin; Di Wang
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Paper Abstract

Si-based p-i-n Quadrant Photodiode Detector(QPD) has be1 en widely used in experimental, military and civilian fields for its spot position detection characteristics. In optoelectronic countermeasure technology, there are defects in the detector after Si-based p-i-n Quadrant Photodiode Detector irradiated with laser, and detectivity is affected, nonlinear changes of dark current and responsivity is produced. Responsivity is an important parameter of photodetector. In this paper, the experimental research of responsivity in the process of interaction between millisecond pulsed laser and Si-based p-i-n Quadrant Photodiode Detector is carried out. It is gotten that the relationship between responsivity with laser energy density and laser pulse width in the process of Si-based p-i-n Quadrant Photodiode Detector irradiated by 1064nm millisecond pulse laser. The result of this research establish the foundation to investigate electrical damage of Si-based p-i-n Quadrant Photodiode Detector interacting with millisecond pulsed laser.

Paper Details

Date Published: 29 March 2019
PDF: 4 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104636 (29 March 2019); doi: 10.1117/12.2525612
Show Author Affiliations
Hongxu Liu, Changchun Univ. of Science and Technology (China)
Guangyong Jin, Changchun Univ. of Science and Technology (China)
Di Wang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

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