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Proceedings Paper

Electronic structure and optical properties of Mg and Al doped ZnO using (TB-mBJ) modified Becke Johnson potential study
Author(s): P. Sai Charan; N. Saketh; R. Mahesh; M. Anand Pandarinath
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Paper Abstract

The electronic structure and ground state properties of SC16-ZnO, Zn7Mg1O8 and Zn7Al1O8 were studied using Wien2k code. The doping effect of magnesium and aluminium on band structure of Zinc Oxide reveals that the profiles are identical, however slightly shifted due to band broadening. Using super cell approach the electronic and optical properties are also studied for Zn7Al1O8 and Zn7Mg1O8. The calculated parameters like onset of critical point or threshold value, fundamental band gap and dielectric functions are reported for SC16-ZnO, Zn7Mg1O8 and Zn7Al1O8.

Paper Details

Date Published: 6 September 2019
PDF: 9 pages
Proc. SPIE 11126, Wide Bandgap Materials, Devices, and Applications IV, 111260F (6 September 2019); doi: 10.1117/12.2525204
Show Author Affiliations
P. Sai Charan, Vidya Jyothi Institute of Technology (India)
N. Saketh, Vidya Jyothi Institute of Technology (India)
R. Mahesh, Vidya Jyothi Institute of Technology (India)
M. Anand Pandarinath, Vidya Jyothi Institute of Technology (India)


Published in SPIE Proceedings Vol. 11126:
Wide Bandgap Materials, Devices, and Applications IV
Mohammad Matin; Andrew P. Lange; Achyut K. Dutta, Editor(s)

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