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Proceedings Paper

1kHz, 532nm top-hat intensity profile high peak power picosecond laser amplification system
Author(s): Shang Lu; Siqi Lv; Ce Yang; Hongpan Peng; Xie Zhang; Meng Chen
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Paper Abstract

A single pulse energy 6.77mJ, repetition rate of 1kHz, pulse width of 11ps at 532nm wavelength with the near top-hat intensity profile in the near filed picosecond laser amplification system is realized using a semiconductor laser side pumped Nd:YAG crystal. The seed pulse is generated in a home-built Nd:YVO4 oscillator, pumped with a 808 nm CW diode laser. The oscillator provides 2.8nJ, 11ps pulse width, 86 MHz repetition rate at 1064 nm wavelength. Pulse from the Nd:YVO4 oscillator is first amplified to 1.5mJ by a diode side-pump Nd:YAG regenerative amplifier. Then the pulse, increased in size by a negative lens, sequentially passed through a circular aperture and a spatial filter-image relaying system to produce a top-hat intensity profile in the modules, and an 8th order super-Gaussian beam is obtained, and total transmission of beam shaping set-up is about 30%. The beam, passed through a double-pass preamplifier of single rod and a double-pass main amplifier of single rod, is amplified up to 17.3mJ, corresponding peak power is 1.57 GW. A 4F relay-imaging system is used in the amplification stages to preserve the top-hat intensity profile and compensate the thermally induced birefringence of Nd:YAG rod. The amplified output beam leaving the double-pass Nd:YAG module is decreased in size and imaged on a 5×5×13 m^3 second-harmonic generation (SHG) crystal-LBO by a 4F relay-imaging system, finally a 532nm approximate top-hat intensity profile in the near filed, which single pulse energy is 6.77mJ, is obtained after doublefrequency. The second-harmonic generation efficiency is over 51%.

Paper Details

Date Published: 29 March 2019
PDF: 7 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104625 (29 March 2019); doi: 10.1117/12.2524348
Show Author Affiliations
Shang Lu, Beijing Univ. of Technology (China)
Siqi Lv, Beijing Univ. of Technology (China)
Ce Yang, Beijing Univ. of Technology (China)
Hongpan Peng, Beijing Univ. of Technology (China)
Xie Zhang, Beijing Univ. of Technology (China)
Meng Chen, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

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