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Proceedings Paper

Irradiation effect on Ag-dispersed amorphous silicon thin films by femtosecond laser
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Paper Abstract

The structural and optical properties of amorphous silicon (a-Si) and Ag-dispersed amorphous silicon (a-Si:Ag) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that at a lower energy density of 100 mg/cm2 , the film microstructure evolves from a completely amorphous phase to an intermediate one containing both amorphous and polycrystalline silicon. During laser irradiation, the formation of nanocrystals in a-Si films begins at lower energy density, but the existing Ag nanoparticles inhibits somehow the crystallization of a-Si in a-Si:Ag films at the same energy density. As the energy density is increased to a moderate value of 200 mj/cm2 , the surface of a-Si:Ag films featuring a vertically aligned pillar-shaped structure is emerging. Both the crystallinity and the root mean square of surface roughness exhibit a monotonic increase with the increase of energy density. The Ag nanoparticles are dispersed uniformly in a silicon matrix, resulting in a resonant light absorption due to so-called localized surface plasmon. The localized surface plasmon resonance (LSPR) wavelengthes of the irradiated aSi:Ag films are increased significantly from 600 nm to about 820 nm, and the bandwidth of the measured absorptance is enhanced in the range of 600~1600 nm. The nanocrystallization mechanism, the formation of pillar-shaped structures and the light absorption enhancement are explained regarding the high electron density and the plasma-surface interactions.

Paper Details

Date Published: 29 March 2019
PDF: 6 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104629 (29 March 2019); doi: 10.1117/12.2524107
Show Author Affiliations
Anran Guo, No. 44 Research Institute (China)
Nasir Ilyas, Univ. of Electronic Science and Technology of China (China)
Yuhao Song, Univ. of Electronic Science and Technology of China (China)
Renfang Lei, No. 44 Research Institute (China)
Hao Zhong, Univ. of Electronic Science and Technology of China (China)
Dongyang Li, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

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