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Proceedings Paper

Electroluminescence enhancement in GaInP/GaAs/Ge tandem solar cells induced by laser
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Paper Abstract

In order to study the mechanisms of thermal damage during laser machining in GaInP/GaAs/Ge tandem solar cells (TSCs), the spatial electroluminescence (EL) characterization on sub-cells pre and post laser irradiation was carried out. Results showed that post laser irradiation, the EL of GaAs middle cell increased to saturation in the damage zone, but decreased to zero at the rest part. A theory was put up to explain this phenomenon by using two-unit equivalent circuit model, and then verified through GaInP top cell spatial EL analysis. Conclusion was drawn that current redistribution induced by local shunt resistance decreasing in GaInP top cell was the main cause for the EL enhancement in GaAs middle cell.

Paper Details

Date Published: 29 March 2019
PDF: 6 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104619 (29 March 2019); doi: 10.1117/12.2523999
Show Author Affiliations
Peng-cheng Dou, Northwest Institute of Nuclear Technology (China)
Guo-bin Feng, Northwest Institute of Nuclear Technology (China)
Jian-min Zhang, Northwest Institute of Nuclear Technology (China)
Zhen Zhang, Northwest Institute of Nuclear Technology (China)
Yun-peng Li, Northwest Institute of Nuclear Technology (China)
Yu-bin Shi, Northwest Institute of Nuclear Technology (China)


Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

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