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Proceedings Paper

High power 808nm to 1060nm CW and QCW laser diode bars (Conference Presentation)
Author(s): Guoli Liu; Sami Lehkonen; Zuntu Xu; Jingwei Li; Heiko Winhold; Sergei V. Govorkov; Heiko Kissel; Jens Biesenbach

Paper Abstract

We present recent progress of high power 808nm to 1060 nm laser bar operating at both CW and QCW operation. At CW operation, we demonstrate 50FF4.0 mm 940nm to 1060 nm bar can achieve up to 300W output power at 300A with high TE purity on MCCP package. At QCW operation, the 808nm 80FF1.5 mm bar can achieve 600W output power at both 25oC and 75oC on standard CCP; and the 75FF3.0 mm 940nm and 970nm bar can achieve 1KW at 1KA. We will also present results of our 808nm ~ 970nm QCW bar at ns region up to multi KA drive.

Paper Details

Date Published: 13 March 2019
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000B (13 March 2019); doi: 10.1117/12.2523782
Show Author Affiliations
Guoli Liu, Coherent, Inc. (United States)
Sami Lehkonen, Coherent, Inc. (United States)
Zuntu Xu, Coherent, Inc. (United States)
Jingwei Li, Coherent, Inc. (United States)
Heiko Winhold, Coherent, Inc. (United States)
Sergei V. Govorkov, Coherent, Inc. (United States)
Heiko Kissel, Coherent DILAS (Germany)
Jens Biesenbach, Coherent DILAS (Germany)

Published in SPIE Proceedings Vol. 10900:
High-Power Diode Laser Technology XVII
Mark S. Zediker, Editor(s)

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