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Proceedings Paper

256 x 256 dual-mode CMOS SPAD image sensor
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Paper Abstract

Initial results of electrical and optical characterization of Voxtel’s first generation 256 x 256 dual-mode silicon singlephoton avalanche diode (SPAD) image sensor are presented. The SPAD image sensor is a dual-mode device capable of sequential passive single-photon-counting (2D) and active single-photon lidar (3D) range imaging at greater than 250 frames per second, full-frame. The sensor was developed in 180-nm complementary metal-oxide semiconductor imagesensor technology with a pixel pitch of 30 μm and fill factor of 9%; and it achieves room temperature per-pixel dark count rate of less than 55 Hz (0.63 Hz/μm2), peak photon detection probability of 29% (at 480 nm) and timing jitter of 268 ps full width at half maximum at the optimal operating point. Preliminary imaging results in 2D and 3D mode are presented.

Paper Details

Date Published: 13 May 2019
PDF: 8 pages
Proc. SPIE 10978, Advanced Photon Counting Techniques XIII, 109780Q (13 May 2019); doi: 10.1117/12.2523084
Show Author Affiliations
Vinit Dhulla, Voxtel, Inc. (United States)
Sapna S. Mukherjee, Voxtel, Inc. (United States)
Adam O. Lee, Voxtel, Inc. (United States)
Nanditha Dissanayake, Voxtel, Inc. (United States)
Booshik Ryu, Voxtel, Inc. (United States)
Charles Myers, Voxtel, Inc. (United States)


Published in SPIE Proceedings Vol. 10978:
Advanced Photon Counting Techniques XIII
Mark A. Itzler; Joshua C. Bienfang; K. Alex McIntosh, Editor(s)

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