Tunnel undoped multiple-gate nano-FET with Schottky source/drain barriers (MG SB TFET) is proposed. One of the advantages of such transistors is the absence of technological operations associated with doping, which include the processes of ion implantation and fast annealing at high temperature (above 1000°C), causing a harmful diffusion of impurity and metal atoms through the structure. In the proposed construction the additional gates produce an electrical doping instead of a physical one in a single-gate p-n or p-i-n TFET. The indispensable fluctuations of doping concentration result in density of state tails in the semiconductor gap and, therefore, lower subthreshold slope of the single-gate TFET than that given by idealized models. The MG SB TFET could combine both low-power and highperformance applications. The sign of voltage on additional gates can switch the type of conductivity from n- to p-type analogously to CMOS technology. The method of fabrication of MG SB TFET is based on a sequential deposition of metals and dielectrics into the trench in dielectric layer on the semiconductor wafer with the subsequent anisotropic plasma etching.

Date Published: 15 March 2019
PDF: 7 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102205 (15 March 2019); doi: 10.1117/12.2522495

Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)