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Proceedings Paper

The ENEA discharge produced plasma extreme ultraviolet source and its patterning applications
Author(s): L. Mezi; S. Bollanti; S. Botti; G. Brusatin; L. Businaro; G. Della Giustina; P. Di Lazzaro; M. Fagnoni; F. Flora; A. Gerardino; D. Murra; S. Protti; A. Torre; E. Torti
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Paper Abstract

The main characteristics of the ENEA Discharge Produced Plasma (DPP) Extreme Ultraviolet (EUV) source are presented together with results of irradiations of various materials. The DPP EUV source, based on a Xe–plasma heated up to a temperature of 30 ÷ 40 eV, emits more than 30 mJ/sr/shot at 10 Hz rep. rate in the 10 ÷ 18 nm wavelength spectral range. The DPP is equipped with a debris mitigation system to protect particularly delicate components needed for patterning applications. The ENEA source has been successfully utilized for sub–micrometer pattern generation on photonic materials and on specifically designed chemically amplified resists. Details down to 100 nm have been replicated on such photoresists by our laboratory–scale apparatus for contact EUV lithography. Preliminary EUV irradiations of graphene films aimed at modifying its properties have been also performed.

Paper Details

Date Published: 3 January 2019
PDF: 6 pages
Proc. SPIE 11042, XXII International Symposium on High Power Laser Systems and Applications, 110420Z (3 January 2019); doi: 10.1117/12.2522469
Show Author Affiliations
L. Mezi, ENEA (Italy)
S. Bollanti, ENEA (Italy)
S. Botti, ENEA (Italy)
G. Brusatin, Univ. degli Studi di Padova (Italy)
L. Businaro, CNR-Istituto di Fotonica e Nanotecnologie (Italy)
G. Della Giustina, Univ. degli Studi di Padova (Italy)
P. Di Lazzaro, ENEA (Italy)
M. Fagnoni, Pavia Univ. (Italy)
F. Flora, ENEA (Italy)
A. Gerardino, Consiglio Nazionale delle Ricerche (Italy)
D. Murra, ENEA (Italy)
S. Protti, Pavia Univ. (Italy)
A. Torre, ENEA (Italy)
E. Torti, Pavia Univ. (Italy)


Published in SPIE Proceedings Vol. 11042:
XXII International Symposium on High Power Laser Systems and Applications
Paolo Di Lazzaro, Editor(s)

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