
Proceedings Paper
Development of a molecular single-electron transistor with a single-atom charge centerFormat | Member Price | Non-Member Price |
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Paper Abstract
Single-electron transistor, parameters and characteristics of which are fundamentally improve with decreasing of sizes of the elements it is created with, is a promising element of extremely small, molecular-scaled electronics. An atomic transistor consisting of a monatomic charge center inside a molecule connected with the source and the drain electrodes by aurophilic terminal groups of this molecule is the most promising version of such a transistor. However, the creation of a reliable technology for the manufacturing of such nanoelements is not yet completed and is a very urgent task. In this paper a version of such a molecular-atomic nanotransistor has been developed and implemented.
Paper Details
Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102206 (15 March 2019); doi: 10.1117/12.2522367
Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102206 (15 March 2019); doi: 10.1117/12.2522367
Show Author Affiliations
V. Gaidamachenko, M.V. Lomonosov Moscow State Univ. (Russian Federation)
E. Morozova, M.V. Lomonosov Moscow State Univ. (Russian Federation)
S. Dagesyan, M.V. Lomonosov Moscow State Univ. (Russian Federation)
E. Morozova, M.V. Lomonosov Moscow State Univ. (Russian Federation)
S. Dagesyan, M.V. Lomonosov Moscow State Univ. (Russian Federation)
E. Soldatov, M.V. Lomonosov Moscow State Univ. (Russian Federation)
E. Beloglazkina, M.V. Lomonosov Moscow State Univ. (Russian Federation)
E. Beloglazkina, M.V. Lomonosov Moscow State Univ. (Russian Federation)
Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
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