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Proceedings Paper

Slippage effects on FEL saturated power in short pulse SASE devices
Author(s): Federico Nguyen; Giuseppe Dattoli; Simonetta Pagnutti; Elio Sabia
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Paper Abstract

In self-amplified spontaneous emission free electron laser devices, the combined effect of slippage and energy spread impose significant limitations on the power performance. We provide a scaling formula capable of parameterizing the effect in terms of the electron beam parameters and discuss mechanisms leading to the output power optimization.

Paper Details

Date Published: 3 January 2019
PDF: 5 pages
Proc. SPIE 11042, XXII International Symposium on High Power Laser Systems and Applications, 110420Q (3 January 2019); doi: 10.1117/12.2522355
Show Author Affiliations
Federico Nguyen, ENEA (Italy)
Giuseppe Dattoli, ENEA (Italy)
Simonetta Pagnutti, ENEA (Italy)
Elio Sabia, ENEA (Italy)

Published in SPIE Proceedings Vol. 11042:
XXII International Symposium on High Power Laser Systems and Applications
Paolo Di Lazzaro, Editor(s)

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