Share Email Print

Proceedings Paper

Mask formation on GaAs substrate by focused ion beams of Ga+ for plasma chemical etching
Author(s): Viktor S. Klimin; Ivan N. Kots; Victoria V. Polyakova; Alexey A. Rezvan; Oleg A. Ageev
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper presents а masking layer formation using the focused ion beams method on the substrate surface of its own undoped gallium arsenide for subsequent plasma chemical etching. Focused ion beam was processed to create a mask for ion-induced plasma-chemical processing. The main parameters affecting the formation of nanoscale structures such as the accelerating voltage of a focused ion beam and the etching time in the plasma are investigated. With an increase in the etching time, the depth of the structures obtained decreased from 68 to 2.5 nm. The possibility of using this method for the formation of nanoscale structures without using liquid lithography is shown.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221R (15 March 2019); doi: 10.1117/12.2522332
Show Author Affiliations
Viktor S. Klimin, Southern Federal Univ. (Russian Federation)
Ivan N. Kots, Southern Federal Univ. (Russian Federation)
Victoria V. Polyakova, Southern Federal Univ. (Russian Federation)
Alexey A. Rezvan, Southern Federal Univ. (Russian Federation)
Oleg A. Ageev, Southern Federal Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?