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Proceedings Paper

Design and simulations of photonic switch using hybrid Ge2Sb2Te5-silicon waveguides in mid-IR region
Author(s): Nadir Ali; Rajesh Kumar
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Paper Abstract

A new window of optical communication is emerging around 2 μm. It is important to design and experimentally demonstrate the photonic devices and components that can support the optical communication in this spectral region by providing the functionalities of switching and routing. The silicon photonics platform for realizing the photonic devices and components will be preferred around 2 μm, like other optical communication windows of 1310 nm and 1550 nm, due to availability of cost effective and high yield CMOS fabrication technology. Photonic switches that are non-volatile in nature and consume lesser power while having ultra-low footprint are likely to be in great demand for future optical communication around 2 μm. Here, we report an ultra-compact 1×1 photonic switch operating at 2.1 μm using nonvolatile phase change material Ge2Sb2Te5 embedded in silicon-on-insulator platform. Embedding of Ge2Sb2Te5in silicon-on-insulator waveguide is done in two different ways to evaluate and compare the switching performance. The emphasis has been on optimization of position and dimensions of Ge2Sb2Te5 in partially and fully etched silicon waveguide. We obtained an extinction ratio of 34.04 dB with low insertion loss of 0.49 dB in ON state with Ge2Sb2Te5 of volume 920 nm× 240 nm × 800 nm (length × height × width) embedded into partially etched silicon waveguide. When Ge2Sb2Te5 is embedded in fully etched silicon waveguide, maximum extinction ratio of ~14dB at the expense of insertion loss of 1.36 dB with Ge2Sb2Te5 of volume 1020 nm× 240 nm × 800 nm.

Paper Details

Date Published: 14 February 2019
PDF: 5 pages
Proc. SPIE 11048, 17th International Conference on Optical Communications and Networks (ICOCN2018), 1104836 (14 February 2019); doi: 10.1117/12.2522258
Show Author Affiliations
Nadir Ali, Indian Institute of Technology Roorkee (India)
Rajesh Kumar, Indian Institute of Technology Roorkee (India)

Published in SPIE Proceedings Vol. 11048:
17th International Conference on Optical Communications and Networks (ICOCN2018)
Zhaohui Li, Editor(s)

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