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Proceedings Paper

Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation
Author(s): Vladimir V. Andreev; Vladimir M. Maslovsky; Dmitrii V. Andreev; Alexander A. Stolyarov
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Paper Abstract

In this work we study influence of α-particles and gamma-ray onto MIS structures being under high-field FowlerNordheim injections of electrons into the gate dielectric. We discover that ionizing current occurring at the time of radiation of MIS structures being under high-field injection of electrons by constant current can significantly lower density of injection current and decrease electric field in the dielectric film. We demonstrate that from analysis of time dependency of voltage across MIS structure at the time of constant current flowing we can determine a value of ionization current. The effect can be utilized for sensors of radiations which allow to control both intensity of radiation and a value of integral absorbed dose of ionizing radiation. We develop a model describing processes of change of charge state of MIS structures being under high-field injection at radiation influence. This model takes into account an interaction of injected electrons with products occurring in the dielectric film as a result of ionization radiation.

Paper Details

Date Published: 15 March 2019
PDF: 7 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102207 (15 March 2019); doi: 10.1117/12.2521985
Show Author Affiliations
Vladimir V. Andreev, Bauman Moscow State Technical Univ. (Russian Federation)
Vladimir M. Maslovsky, Moscow Institute of Physics and Technology (Russian Federation)
Dmitrii V. Andreev, Bauman Moscow State Technical Univ. (Russian Federation)
Alexander A. Stolyarov, Bauman Moscow State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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