Share Email Print
cover

Proceedings Paper

1.3um InAs/InGaAs QD laser steady output power over 1.07W
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (Ith) and threshold current density (Jth) is 0.3A and 150A/cm2 at 15°, and output power at Ith=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 1105212 (24 January 2019); doi: 10.1117/12.2521947
Show Author Affiliations
Fu-Hui Shao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xiang-Bin Su, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hui-ming Hao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ying-Qiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hai-Qiao Ni, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11052:
Third International Conference on Photonics and Optical Engineering
Ailing Tian, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray