Proceedings Paper
Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation| Format | Member Price | Non-Member Price |
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Paper Abstract
TID(total dose effect) and HCI(hot carrier injection) are hot issues of space application devices research in recent years. Previous studies drew the conclusion that TID radiation harden process can restrain HCI effectively. However, there have few reliability studies on radiation hardened device reported. In this article, the author irradiates RH T-Gate PD SOI NMOS and conduct a hot carrier experiment afterwards. He makes a detailed analysis of RH devices’ hot carrier reliability in different structure and reach a conclusion that radiation-induced HCI enhancement effect still exists in RH SOI experienced TID radiation because of the presence of buried oxide, which is contrary to results of previous studies on bulk silicon devices.
Paper Details
Date Published: 12 March 2019
PDF: 5 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102320 (12 March 2019); doi: 10.1117/12.2521943
Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)
PDF: 5 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102320 (12 March 2019); doi: 10.1117/12.2521943
Show Author Affiliations
Jinghao Zhao, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Univ. of Chinese Academy of Sciences (China)
Jiangwei Cui, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Qiwen Zheng, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Hang Zhou, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Univ. of Chinese Academy of Sciences (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Univ. of Chinese Academy of Sciences (China)
Jiangwei Cui, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Qiwen Zheng, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Hang Zhou, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Univ. of Chinese Academy of Sciences (China)
Xiaowen Liang, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Xuefeng Yu, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Qi Guo, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Xuefeng Yu, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Qi Guo, Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Devices (China)
Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)
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