Share Email Print
cover

Proceedings Paper

High brightness narrow-stripe broad-area diode lasers at 976 nm
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this research, the transversal mode of 970 nm broad area laser diode based on a large optical cavity is studied. The vertical far-field patterns were measured to be dependent on the cavity caused facet loss. High-orders modes achieve lasing with higher facet loss while they can be completely suppressed by a low facet loss. The suppression of high-order modes was attributed to be an increase in the discrimination of differential quantum efficiency between high-order modes and the fundamental mode, which matches well with simulation. When the discrimination exceeds probable fluctuations, the high-order modes will be completely suppressed and lasing of single fundamental mode will achieve. According to our experiment results, the optimal resonance cavity length is about 6 mm in order to realize fundamental mode and simultaneously a high slope efficiency. As a consequence, high efficiency 970 nm broad area laser with slope efficiency over 1.07 W/A and full wavelength half maximum (FWHM) less than 2 nm@1A is demonstrated.

Paper Details

Date Published: 12 March 2019
PDF: 5 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110234H (12 March 2019); doi: 10.1117/12.2521923
Show Author Affiliations
Yi Li, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Weichuan Du, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Kun Zhou, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Junjie Kang, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Songxin Gao, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Deyong Wu, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Yao Hu, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Liang Zhang, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Hao Tan, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Chun Tang, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray