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Proceedings Paper

Room temperature continuous wave operation of GaSb - based semiconductor disk laser near 2 μm
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Paper Abstract

The semiconductor epitaxial design and lasing characteristics of an optically barrier-pumped GaSb -based semiconductor disk laser (SDL) emitting at 2.0 μm optimized for resonant optical barrier pumping around 1470 nm are presented. Compared to conventional barrier-pumped devices with pump wavelength of 980nm, the novel barrier-pumped device with the smaller quantum deficit reaches a significantly higher power efficiency, and thus a higher output power at a given pump power, due to the lesser internal heat generation. Using an intracavity SiC heat spreader, a cw output power in excess of 300 mW has been achieved at a heat sink temperature of +15 °C, and still more than 500 mW at +10 °C.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520T (24 January 2019); doi: 10.1117/12.2521861
Show Author Affiliations
Jin-Ming Shang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Jian Feng, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Univ. of Chinese Academy of Sciences (China)
Cheng-Ao Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Shen-Wen Xie, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ye Yuan, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Shu-Shan Huang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Cun-Zhu Tong, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11052:
Third International Conference on Photonics and Optical Engineering
Ailing Tian, Editor(s)

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