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Proceedings Paper

The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact
Author(s): Galina V. Chucheva; Evgeny I. Goldman; Asaf Nabiev; Valentina G. Naryshkina
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Paper Abstract

Measurements of characteristics of the inversion channel conductivity of MOS-transistors after the ion polarization and depolarization of samples in the range of values of the induction of the transverse magnetic field of 0 – 5 T at temperatures from 100 K to 200 K were carried out. After the ionic polarization at 420 K under the action of a strong electric field in the oxide at least 6·1013 cm-2 ions flowed. The previously observed increase of the conductivity in the source-drain circuit after the polarization of insulating layers is up to 10 times explained by the formation of a new electrical transfer path through the surface impurity band, associated with delocalized D states, that are generated by neutralized ions located in the insulating layer at the interface with a semiconductor.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102215 (15 March 2019); doi: 10.1117/12.2521817
Show Author Affiliations
Galina V. Chucheva, Kotelnikov Institute of Radio Engineering and Electronics of RAS (Russian Federation)
Evgeny I. Goldman, Kotelnikov Institute of Radio Engineering and Electronics of RAS (Russian Federation)
Asaf Nabiev, Azerbaijan State Pedagogical Univ. (Azerbaijan)
Valentina G. Naryshkina, Kotelnikov Institute of Radio Engineering and Electronics of RAS (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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