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Proceedings Paper

A novel approach to model high-speed microelectronic switch on the basis of hydrodynamic approximation
Author(s): E. Ryndin; A. Al-Saman
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Paper Abstract

In this paper, we introduce a new approach to model microwave high-speed microelectronic switch based on two vertically integrated quantum wells. Considering both longitudinal and transverse transport of electrons, an equivalent circuit and quasi-two-dimensional hydrodynamic model were suggested. The quasi-two-dimensional hydrodynamic model provides a detailed calculation of the spatial distributions of potential, electric field, electronic temperature, mobility, sheet electron concentration, the drift velocity of electrons and population ratio for the X and Γ valleys within the quantum channel with allowance for the overshoot effect along with the inter-valley transitions and ballistic transport. An analytical expression describing the switching time was derived. The distinctive feature of the proposed model is a possibility to calculate I-V characteristics without using any smoothing functions for joining linear and saturation regions. Numerical realization of the developed quasi-two-dimensional model shows high convergence and less computational expenditure compare to two-dimensional physical models. In addition, this approach may be used as a powerful tool for circuit designing based on the high-speed microelectronic switches as well as for their structure and parameter optimization. Our approach as well can be applied to simulate other devices behind microelectronic switch such as HEMT transistor and VMT transistor.

Paper Details

Date Published: 15 March 2019
PDF: 9 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220J (15 March 2019); doi: 10.1117/12.2521711
Show Author Affiliations
E. Ryndin, Southern Federal Univ. (Russian Federation)
A. Al-Saman, Southern Federal Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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