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Proceedings Paper

Resistive switching memory devices based on all-inorganic perovskite CsPbBr3 quantum dot
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Paper Abstract

All-inorganic perovskite quantum dots (QDs) have widely used in a lot of micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on All-inorganic perovskite QDs are relatively scarce. In this work, a RRAM, which exhibits the write-once-read-many-times (WORM) memory effect, based on CsPbBr3 QDs was successfully fabricated by solution processed method at room temperature. The CsPbBr3 QDs based memory shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 107. To study the CsPbBr3 QDs based WORM memory provides an opportunity to develop the next generation high-performance and stable WORM devices.

Paper Details

Date Published: 12 March 2019
PDF: 7 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110234B (12 March 2019); doi: 10.1117/12.2521479
Show Author Affiliations
Zhiliang Chen, Tianjin Univ. (China)
Yating Zhang, Tianjin Univ. (China)
Yu Yu, Tianjin Univ. (China)
Mingxuan Cao , Tianjin Univ. (China)
Yongli Che, Tianjin Univ. (China)
Lufan Jin, Tianjin Univ. (China)
Yifan Li, Tianjin Univ. (China)
Qingyan Li , Tianjin Univ. (China)
Tengteng Li, Tianjin Univ. (China)
Haitao Dai, Tianjin Univ. (China)
Junbo Yang, National Univ. of Defense Technology (China)
Jianquan Yao , Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

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