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Proceedings Paper

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies
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Paper Abstract

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×106 and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Paper Details

Date Published: 13 May 2019
PDF: 8 pages
Proc. SPIE 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI, 109800M (13 May 2019); doi: 10.1117/12.2521464
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
John W. Zeller, Magnolia Optical Technologies, Inc. (United States)
Parminder Ghuman, NASA Earth Science Technology Office (United States)
Sachidananda Babu, NASA Earth Science Technology Office (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 10980:
Image Sensing Technologies: Materials, Devices, Systems, and Applications VI
Nibir K. Dhar; Achyut K. Dutta; Sachidananda R. Babu, Editor(s)

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