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Proceedings Paper

Formation of metallic nanowire and nanonet structures on the surface of SiO2 by combine plasma etching processes
Author(s): I. I. Amirov; E. S. Gorlachev; L. A. Mazaletsky; M. O. Izyumov
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Paper Abstract

In this work we report a new approach to the fabrication of metallic nanowire and nanonet structures on a-Si/SiO2/Si substrates by combine plasma etching processes. For the formation of Pt nanostructures we used a controlled two-step plasma etching in C4F8/Ar and SF6 plasma, which resulted in a self-formation of fluorocarbon nanowires and nanonets. Then, we used these nanostructures as nanoscale templates for 10 nm thin metallic nanowires, which were obtained with magnetron Pt film deposition, Ar plasma sputtering and Pt redeposition.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102221 (15 March 2019); doi: 10.1117/12.2521275
Show Author Affiliations
I. I. Amirov, Institute of Physics and Technology (Russian Federation)
E. S. Gorlachev, Institute of Physics and Technology (Russian Federation)
L. A. Mazaletsky, Institute of Physics and Technology (Russian Federation)
M. O. Izyumov, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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