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Proceedings Paper

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
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Paper Abstract

Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).

Paper Details

Date Published: 7 May 2019
PDF: 18 pages
Proc. SPIE 11002, Infrared Technology and Applications XLV, 110020G (7 May 2019); doi: 10.1117/12.2521173
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Arash Dehzangi, Northwestern Univ. (United States)
Donghai Wu, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Yiyun Zhang, Northwestern Univ. (United States)
Quentin Durlin, Northwestern Univ. (United States)
Jiakai Li, Northwestern Univ. (United States)
Fanfei Meng, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 11002:
Infrared Technology and Applications XLV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson, Editor(s)

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