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Proceedings Paper

Triacrylamide polyfluorinated chalcone derivative as high resistant light-sensitive material for technology of diffractive optical elements
Author(s): Sergey V. Derevyashkin; Elena A. Soboleva; Vladimir V. Shelkovnikov; Victor P. Korolkov; Anatoly I. Malyshev; Evgeny V. Spesivtsev
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Paper Abstract

The manufacturing methods and materials for diffractive optical elements are actively developed due to the prospects of their use in various components of the microsystem technology. Photolithography occupies a central place in modern manufacturing technology for such components. The photoresists used in it can be exposed to high (100-150 degrees) temperatures, treated in a liquid environment, aggressive (alkaline, acidic) fluids, reactive ion etching (RIE), and electrolyte exposed to electrochemical deposition of metals. Therefore, the development of photoresist materials with thermo-, plasma-, chemo- and moisture resistance is relevant and of the high interest at this time. One of the promising classes of organic compounds with photoresistive properties is the chalcones. It is shown that polyfluorochalcones are capable of providing the holographic recording of transmission gratings with diffraction efficiency up to 59% and angular selectivity up to 54.5°. The masking and thermal properties of triacrylamide polyfluorochalcon (TAPCh), its triaryl pyrazoline modification (TAP), as well as modifications by prepolymerized triaryl pyrazoline (polyTAP) under liquid chemical conditions (in H2SO4, H3PO4, NaOH) and reactive ion etching (in plasma CF4) were investigated. A comparison of properties with commercially available photoresists SU-8, AZ4562 was also conducted. It has been shown that TAFH is resistant to liquid etching, which is the same for SU-8, but shows higher results in RIE process; TAFH exceeds the performance of photoresist AZ4562 in resistance to RIE, and significantly exceeds it in liquid (alkaline and acid) etching; thermal stability TAFH exceeds SU-8 and AZ4562.

Paper Details

Date Published: 14 May 2019
PDF: 9 pages
Proc. SPIE 11030, Holography: Advances and Modern Trends VI, 110301D (14 May 2019); doi: 10.1117/12.2521139
Show Author Affiliations
Sergey V. Derevyashkin, N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS (Russian Federation)
Elena A. Soboleva, N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry of SB RAS (Russian Federation)
Vladimir V. Shelkovnikov, N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS (Russian Federation)
Victor P. Korolkov, Institute of Automation and Electrometry of the SB RAS (Russian Federation)
Anatoly I. Malyshev, Institute of Automation and Electrometry of the SB RAS (Russian Federation)
Evgeny V. Spesivtsev, Rzhanov Institute of Semiconductor Physics SB of the RAS (Russian Federation)

Published in SPIE Proceedings Vol. 11030:
Holography: Advances and Modern Trends VI
Antonio Fimia; Miroslav Hrabovský; John T. Sheridan, Editor(s)

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