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Proceedings Paper

Application of downstream plasma generated radical methylation treatment to passive amorphous Si surface from TMAH etching during lithography process
Author(s): Qi Zhang; Haochen Li; Xinliang Lu; Ting Xie; Hua Chung; Shawming Ma; Michael Yang
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Paper Abstract

Relentless semiconductor device scaling relies on lithography technology advancement. Patterning films including hardmask, anti-reflective coating (ARC) and photoresist (PR) materials continue to evolve, and more underlying materials are exposed in increasingly complex 3D device structures. As a result, industry is continuously seeking solutions to integrate new patterning films with different underlying materials and structures, and surface treatment for materials protection plays an increasingly important role in process integration. In this paper, we present a radical based surface methylation process. The novel surface methylation treatment process increases surface wetting angle in preparation of patterning film coating, and can effectively protect various sensitive underlying materials. The versatile technology has many potential applications in 3D device fabrication, e.g. a new adhesion promoter for ARC/PR coating.

Paper Details

Date Published: 25 March 2019
PDF: 10 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096026 (25 March 2019); doi: 10.1117/12.2521136
Show Author Affiliations
Qi Zhang, Mattson Technology, Inc. (United States)
Haochen Li, Mattson Technology, Inc. (United States)
Xinliang Lu, Mattson Technology, Inc. (United States)
Ting Xie, Mattson Technology, Inc. (United States)
Hua Chung, Mattson Technology, Inc. (United States)
Shawming Ma, Mattson Technology, Inc. (United States)
Michael Yang, Mattson Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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