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Proceedings Paper

High-efficiency Ge-on-Si SPADs for short-wave infrared
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Paper Abstract

High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm - 1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2, and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

Paper Details

Date Published: 27 February 2019
PDF: 7 pages
Proc. SPIE 10914, Optical Components and Materials XVI, 1091424 (27 February 2019); doi: 10.1117/12.2521067
Show Author Affiliations
Derek C. S. Dumas, Univ. of Glasgow (United Kingdom)
Jarosław Kirdoda, Univ. of Glasgow (United Kingdom)
Ross W. Millar, Univ. of Glasgow (United Kingdom)
Peter Vines, Heriot-Watt Univ. (United Kingdom)
Kateryna Kuzmenko, Heriot-Watt Univ. (United Kingdom)
Gerald S. Buller, Heriot-Watt Univ. (United Kingdom)
Douglas J. Paul, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 10914:
Optical Components and Materials XVI
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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