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Proceedings Paper

Radiation hardness of semiconductor single photon detection structure
Author(s): Vit Sopko; Bruno Sopko; Vladislav Pisa; Josef Blazej
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Paper Abstract

The detection structure, it has been used in this experiment is employed for producing a single photon detector. The experiment was based on the analysis of changes in this low noise structure of a single photon detector in connection with its radiation damage in the event of neutron flux exposure. For the analysis of the radiation damaged structure was used the Zero Bias Thermally stimulated current method to explore the possibilities of filling traps with light sources. The filling of traps with photons emitted from LEDs or a flash device is compared on a neutron irradiated Si detector. The results of this experiment are used to increase the radiation hardness of manufactured single photon detection structures.

Paper Details

Date Published: 30 April 2019
PDF: 6 pages
Proc. SPIE 11027, Quantum Optics and Photon Counting 2019, 110270L (30 April 2019); doi: 10.1117/12.2521042
Show Author Affiliations
Vit Sopko, Czech Technical Univ. in Prague (Czech Republic)
Bruno Sopko, Czech Technical Univ. in Prague (Czech Republic)
Vladislav Pisa, Czech Technical Univ. in Prague (Czech Republic)
Josef Blazej, Czech Technical Univ. in Prague (Czech Republic)

Published in SPIE Proceedings Vol. 11027:
Quantum Optics and Photon Counting 2019
Ivan Prochazka; Roman Sobolewski; Ralph B. James; Peter Domokos; Adam Gali, Editor(s)

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