Share Email Print

Proceedings Paper

Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector
Author(s): Ruizhong Wang; Peiyi Chen; Peihsin Tsien; Guangli Luo; Kangli Zheng; Junming Zhou
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this paper, we present a new electrode structure for P+-GexSi1-x/p-Si heterojunction internal photoemission (HIP) long-wavelength infrared detector (LWIRD). The advantages of this structure has been verified by experimental results. The electrical and photoresponse characteristics of the detector with 100 nm-thick Ge0.3Si0.7 layer at 77 K are reported. In addition, a new analytic quantum efficiency model for P+-GexSi1-x/p-Si HIP LWIRD is built based on modification of old model. Comparing with old models, it is characterized in that the impact of carriers transporting on quantum efficiency is considered. It is shown that this model is more consistent with actuality than old model through the comparison between the theoretical results and experimental results. The optimal thickness of GexSi1-x layer can be estimated by this model and the result also agrees with the experiment.

Paper Details

Date Published: 25 September 1996
PDF: 8 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252093
Show Author Affiliations
Ruizhong Wang, Tsinghua Univ. (China)
Peiyi Chen, Tsinghua Univ. (China)
Peihsin Tsien, Tsinghua Univ. (China)
Guangli Luo, Institute of Physics (China)
Kangli Zheng, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)

Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?