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Proceedings Paper

Spectral response filtering by lateral scanning of Silicon NSOM photodetector with subwavelength aperture
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Paper Abstract

Persisting in the large trend to enhance the Near-field Scanning Optical Microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector, and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using Finite Elements Method and 3D advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Electrooptical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.

Paper Details

Date Published: 11 April 2019
PDF: 6 pages
Proc. SPIE 11028, Optical Sensors 2019, 110281J (11 April 2019); doi: 10.1117/12.2520508
Show Author Affiliations
Avi Karsenty, Jerusalem College of Technology (Israel)
Matityahu Karelits, Jerusalem College of Technology (Israel)


Published in SPIE Proceedings Vol. 11028:
Optical Sensors 2019
Francesco Baldini; Jiri Homola; Robert A. Lieberman, Editor(s)

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