The rapid advancement of microelectronics technology places higher demands on the interconnection of integrated circuits. The continuous reduction of the critical dimension in the microelectronics fabrication process has led to an increase in the power consumption of the metal interconnect lines. There are many advantages of the on-chip optical interconnect structure, like high speed or low power consumption. Therefore it is one of the best alternatives to the metal interconnect process. GaAlAs/ GaAs is used to make light sources of common optical interconnect structures and these light sources are poorly compatible with CMOS processes. In this paper, we designs a new structure of silicon-based avalanche light source (SBALS), which has the advantages of being compatible with CMOS technology, based on the existing theory of SBALS. And we preliminarily design an on-chip optical interconnect structure by SBALS, which is proposed for optical interconnects in integrated circuits.

Date Published: 12 March 2019
PDF: 6 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102342 (12 March 2019); doi: 10.1117/12.2520347

Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)