Share Email Print

Proceedings Paper

Development of sub-10µm pitch HgCdTe infrared detectors
Author(s): J. Abergel; F. Rochette; S. Gout; X. Baudry; C. Grangier; A. Even; J.-L. Santailler; D. Giotta; R. Obrecht; T. Pellerin; L. Bonnefond; J. Rothman; S. Bisotto
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This LETI/Sofradir/Defir study aims at realizing sub-10 μm pitch HgCdTe infrared FPAs. To cope with the different diode process issues related to pitch reduction-morphologic realization, short-circuits, FTM optimization - a parametric study was carried out - contact size, passivation properties, doping levels, diode processing conditions-. A wafer-level test campaign was conducted to evaluate the process window. It revealed functional MWIR diodes from 15 μm to 3 μm pitch. 7.5 μm pitch 640×512 and 5 μm pitch 64×152 FPA were characterized and turned out to be functional.

Paper Details

Date Published: 7 May 2019
PDF: 8 pages
Proc. SPIE 11002, Infrared Technology and Applications XLV, 1100222 (7 May 2019); doi: 10.1117/12.2520030
Show Author Affiliations
J. Abergel, CEA-LETI (France)
F. Rochette, CEA-LETI (France)
S. Gout, CEA-LETI (France)
X. Baudry, CEA-LETI (France)
C. Grangier, CEA-LETI (France)
A. Even, CEA-LETI (France)
J.-L. Santailler, CEA-LETI (France)
D. Giotta, CEA-LETI (France)
R. Obrecht, CEA-LETI (France)
T. Pellerin, CEA-LETI (France)
L. Bonnefond, CEA-LETI (France)
J. Rothman, CEA-LETI (France)
S. Bisotto, CEA-LETI (France)

Published in SPIE Proceedings Vol. 11002:
Infrared Technology and Applications XLV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?