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Proceedings Paper

Area-selective atomic layer deposition of dielectric-on-dielectric for Cu/low-k dielectric patterns
Author(s): Tzu-Ling Liu; Stacey F. Bent
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Paper Abstract

Area-selective atomic layer deposition (AS-ALD) has received a great deal of attention in recent years because of its potential to provide a more robust and controllable fabrication process for next generation electronic devices. In this paper, we study selective deposition of metal oxides on Cu/low-k dielectric patterns. We demonstrate that the inherent growth rate of ALD films is higher on Cu than on low-k surfaces, which indicates the importance of using organic molecules as an inhibitor to prevent ALD growth on Cu surfaces if the goal is to achieve area-selective deposition of materials on lowk surfaces. We show that vapor-phase dodecanethiol (DDT) can be used as an inhibitor. DDT is selectively deposited on Cu surfaces and is effective at ZnO ALD blocking with selectivity greater than 90% after 100 ALD cycles (~17 nm). With the optimization of DDT deposition temperature and Al2O3 deposition conditions, the blocking ability of DDT against a more aggressive precursor is further improved and shows selectivity above 90% after 1.5 nm Al2O3 deposition.

Paper Details

Date Published: 15 May 2019
PDF: 7 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600O (15 May 2019); doi: 10.1117/12.2519845
Show Author Affiliations
Tzu-Ling Liu, Stanford Univ. (United States)
Stacey F. Bent, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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