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Proceedings Paper

MBE growth of low-threshold-current InGaAs VCSEL structure
Author(s): Yaowang Lin; Zengqi Zhou; Zhongqi Pan; Zhichuan Niu; Chao Yong Li; Rong Han Wu
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Paper Abstract

The structures of InGaAs/GaAs strained QW vertical cavity suurface-emitting lasers with low threshold current have been grown on tilted substrate by a modificatoy MBE system. The VCSEL structure contains 23.5 pairs n-type DBR , a strained InGaAs/GaAs 3QW active region ,and 20.5 pairs p-type DBR. The emission wavelength of InxGaixAs IGaAs QW lasers as a function of indium contents (x) and QW width has been studied theoretically and experimentally. The experimental results compared with theoretical calcuulation were in good agreement. The device measurements showed that room temperature CW operation of VCSEL has been achieved with the threshold current as low as 0.7 mA at 9430 A wavelength, and quantum efficiency above 12%.

Paper Details

Date Published: 24 September 1996
PDF: 4 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251905
Show Author Affiliations
Yaowang Lin, Institute of Semiconductors (China)
Zengqi Zhou, Institute of Semiconductors (China)
Zhongqi Pan, Institute of Semiconductors (China)
Zhichuan Niu, Institute of Semiconductors (China)
Chao Yong Li, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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