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Proceedings Paper

Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD
Author(s): Igor Dmitrievich Zalevsky; Peter V. Bulaev; Anatoliy A. Padalitsa; Vladimir Alekseevic Gorbylev
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Paper Abstract

In this paper AlInGaAs/AlGaAs strained quantum well broad- stripe lasers with proton insulating grown by metalorganic chemical vapor deposition, lasing at 808 nm are presented. Electrical and optical characteristics and reliability of this lasers were investigated and compared with (Al)GaAs/ALGaAs quantum well lasers manufactured by the same technology. It was shown that diode lasers based on quaternary material system presents the advantage over AlGaAs diode lasers in operating efficiency and reliability due to In contained in active layer, and consequently, hardening of the crystal lattice. Thus, laser diodes with lifetime more than 104 hours at operation power 0.5 Watt in cw multimode regime were manufactured.

Paper Details

Date Published: 24 September 1996
PDF: 9 pages
Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251878
Show Author Affiliations
Igor Dmitrievich Zalevsky, Sigma Plus Co. (Russia)
Peter V. Bulaev, Sigma Plus Co. (Russia)
Anatoliy A. Padalitsa, Sigma Plus Co. (Russia)
Vladimir Alekseevic Gorbylev, Sigma Plus Co. (Russia)

Published in SPIE Proceedings Vol. 2886:
Semiconductor Lasers II
Siamak Forouhar; Qiming Wang, Editor(s)

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