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Proceedings Paper

High-responsivity graphene infrared photodetectors using photo-gating effect
Author(s): Shoichiro Fukushima; Masaaki Shimatani; Satoshi Okuda; Shinpei Ogawa; Yasushi Kanai; Takao Ono; Koichi Inoue; Kazuhiko Matsumoto
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Paper Abstract

Graphene has remarkable optoelectronic properties and thus would represent a means to improve infrared (IR) photodetectors. As a result of its Dirac-cone structure, graphene exhibits broadband light absorption and a rapid response. Unlike quantum photomaterials, graphene can also be synthesized inexpensively via a non-toxic process. Despite these advantages, graphene-based photodetectors suffer from low responsivity due to the low absorption of graphene of around 2.3%. Therefore, there is a strong demand to enhance the IR responsivity of graphene photodetectors and expand the range of IR applications. In this study, enhancement of the middle-wavelength IR (MWIR) photoresponsivity of graphene photodetectors using the photogating effect was investigated. The photo-gating effect is induced by photosensitizers, which are located around the graphene channel and couple incident light and generate a large electrical change. The graphenebased MWIR photodetectors consisted of a top graphene channel, source-drain electrodes, insulator layer, and photosensitizer. The photoresponse characteristics were investigated through current measurements using a device analyzer. The device was vacuum-cooled and the graphene channel was irradiated with light from a MWIR laser. The device exhibited a clear MWIR photoresponse observed as modulation of the output current during irradiation. The MWIR photoresponse with the photo-gating effect was 100 times higher than that of conventional graphene photodetectors without the photo-gating effect. The device maintained its MWIR photoresponse at temperatures up to 150 K. The results obtained in this study will contribute to the development of high-performance graphene-based IR image sensors.

Paper Details

Date Published: 7 May 2019
PDF: 6 pages
Proc. SPIE 11002, Infrared Technology and Applications XLV, 1100223 (7 May 2019); doi: 10.1117/12.2518396
Show Author Affiliations
Shoichiro Fukushima, Mitsubishi Electric Corp. (Japan)
Masaaki Shimatani, Mitsubishi Electric Corp. (Japan)
Satoshi Okuda, Mitsubishi Electric Corp. (Japan)
Shinpei Ogawa, Mitsubishi Electric Corp. (Japan)
Yasushi Kanai, Osaka Univ. (Japan)
Takao Ono, Osaka Univ. (Japan)
Koichi Inoue, Osaka Univ. (Japan)
Kazuhiko Matsumoto, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 11002:
Infrared Technology and Applications XLV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson, Editor(s)

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