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Proceedings Paper

Role of microstructure and stress evolution on the elastic constants of multiferroic oxide-based thin films
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Paper Abstract

Multiferroic oxide thin films continue to receive intensive research interest due to their excellent combination of properties that are related to the ferroic orders. In this paper, BiFeO3 thin films are fabricated on (001) Si substrates at varying ad-atom energy to establish the role of microstructure and stress evolution on their elastic properties. Stress evolution in the films is accomplished through incorporation of argon ions during in-situ film growth. The dynamics of the propagation of surface acoustic waves on BiFeO3 thin films of varying microstructure and stress is investigated using surface Brillouin scattering (SBS). The film substrate configuration is of a slow on fast configuration that supports Rayleigh surface acoustic waves (RSAW) and Sezawa waves. Hence the phonon velocity dispersion curves were determined from the frequency shifts of both sets of the waves in the discrete region at constant incident angle of 71 deg. Using the inverse problem the elastic constant for isotropic film systems have been determined with the results showing that Ar+ incorporation decreases the bulk moduli and increases the shear moduli by 50%.

Paper Details

Date Published: 1 March 2019
PDF: 12 pages
Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091923 (1 March 2019); doi: 10.1117/12.2518314
Show Author Affiliations
Fekadu H. Ayele, Univ. of the Witwatersrand, Johannesburg (South Africa)
Daniel M. Wamwangi, Univ. of the Witwatersrand, Johannesburg (South Africa)
Kudakwashe Jakata, Univ. of the Witwatersrand, Johannesburg (South Africa)
Darrell J. Comins, Univ. of the Witwatersrand, Johannesburg (South Africa)
Dave G. Billing, Univ. of the Witwatersrand, Johannesburg (South Africa)
Eric G. Njoroge, Univ. of Pretoria (South Africa)
Thomas Wittkowski, IEE S.A. (Luxembourg)


Published in SPIE Proceedings Vol. 10919:
Oxide-based Materials and Devices X
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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