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Proceedings Paper

Improvement of spectrum measurement accuracy by high resolution spectrometer for DUV laser
Author(s): Masakazu Hattori; Sophia Hu; Takehito Kudo; Toshihiri Oga; Hakaru Mizoguchi
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Paper Abstract

In recent years, DUV light source used in lithography process is enabling to shrink the feature size as a driver for Moore's law, in order to push the physical limits of semiconductor device. E95, also known as spectral bandwidth, is one of the most important parameters in the semiconductor lithography process. Light source is required to push E95 to be tighter in order to improve image contrast, and also required to improve E95 control technology to contribute to OPE (Optical Proximity Effect) error reduction. Therefore, measurement accuracy is crucial important to measure spectral bandwidth. Current measurement error is 5.6 fm (femtometers) when E95 is 300 fm, under a standard spectral metrology tool as ELIAS (Echelle Based Spectrometers produced by LASERTECHNIK BERLIN GmbH). Gigaphoton's recent technology successfully reduced the E95 target value from the existing 300 fm to 200 fm by decreasing the optical thermal load for the LNM (Line-Narrowing Module) [1]. Under current measurement method, the error will be increased, when E95 is set at 200 fm. In order to resolve this problem, Gigaphoton uses a grating base spectral measurement, to reduce the error, by optical engineering improvement and high-resolution spectrum measurement. This ultra-high-resolution measurement impact to OPE error reduction.

Paper Details

Date Published: 20 March 2019
PDF: 6 pages
Proc. SPIE 10961, Optical Microlithography XXXII, 1096110 (20 March 2019); doi: 10.1117/12.2517690
Show Author Affiliations
Masakazu Hattori, Gigaphoton, Inc. (Japan)
Sophia Hu, Gigaphoton, Inc. (Japan)
Takehito Kudo, Gigaphoton, Inc. (Japan)
Toshihiri Oga, Gigaphoton, Inc. (Japan)
Hakaru Mizoguchi, Gigaphoton, Inc. (Japan)

Published in SPIE Proceedings Vol. 10961:
Optical Microlithography XXXII
Jongwook Kye; Soichi Owa, Editor(s)

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