Since vast frequency range in 300GHz band is available for wireless communication in future generation, near- fiber-optic speed over 100Gbps will be possible. Here, to target at real commercial products, a transceiver with all CMOS technology is promising since digital signal processing including baseband modulation must be with CMOS integrated circuits. However, high-frequency characteristics of silicon MOSFETs used in the CMOS technology are generally inferior to those of advanced InP devices. Recently, a 300GHz CMOS transceiver capable of quadrature-amplitude-modulation (QAM) has been demonstrated. In this presentation, terahertz frontend technologies with CMOS process are explained. Then, performance comparison of 300GHz transceivers with miscellaneous technologies is clarified. Finally, future promising application for terahertz wireless communication is introduced.

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10917, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, 109170L (1 March 2019); doi: 10.1117/12.2516761

Published in SPIE Proceedings Vol. 10917:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII
Laurence P. Sadwick; Tianxin Yang, Editor(s)