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Proceedings Paper

Influence of the number of pairs in the top DBR and carrier injection efficiency on the nitride VCSEL performance
Author(s): Robert P. Sarzała; Patrycja Śpiewak; Łukasz Piskorski
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Paper Abstract

In this work, we present numerical simulation of over-threshold characteristics of a GaN-based tunnel-junction verticalcavity surface-emitting laser similar to the device developed at the University of California, Santa Barbara [1]. This structure has dual dielectric mirrors, and a bottom ring contact which additionally works as a heat spreader. Moreover, to introduce confinement of current and optical mode, the additional implantation is applied for outer regions of the cavity. The results show how the number of pairs in the top mirror influence the power emitted by the device. We found that for 11 pairs in the top DBR, which is 1 pair less than for the basic structure, the maximal output power is the highest and is equal to 0.2 mW. We also investigate the impact of the carrier injection efficiency, which can be treated as a fitting parameter in described model, on power-current characteristics.

Paper Details

Date Published: 4 December 2018
PDF: 9 pages
Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 1097405 (4 December 2018); doi: 10.1117/12.2516647
Show Author Affiliations
Robert P. Sarzała, Lodz Univ. of Technology (Poland)
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Łukasz Piskorski, Lodz Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10974:
Laser Technology 2018: Progress and Applications of Lasers
Jan K. Jabczynski; Ryszard S. Romaniuk, Editor(s)

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